Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

Bulk discount available

Subtotal (1 tube of 500 units)*

Kr.6 825 00 

(exc. VAT)

Kr.8 530 00 

(inc. VAT)

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Units
Per unit
Per Tube*
500 - 500Kr. 13,65Kr. 6 825,00
1000 +Kr. 12,967Kr. 6 483,50

*price indicative

RS Stock No.:
242-0977
Mfr. Part No.:
IGP20N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

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