STMicroelectronics IGBT 1200 V, 3-Pin

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Subtotal (1 tube of 30 units)*

Kr. 2 010,24

(exc. VAT)

Kr. 2 512,80

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 67,008Kr. 2 010,24
60 +Kr. 66,177Kr. 1 985,31

*price indicative

RS Stock No.:
244-3194
Mfr. Part No.:
STGYA50H120DF2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

535W

Pin Count

3

Switching Speed

5μs

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Series

H

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

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