Infineon IGBT Module 1200 V

Subtotal (1 tray of 10 units)*

Kr. 11 962,46

(exc. VAT)

Kr. 14 953,08

(inc. VAT)

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Units
Per unit
Per Tray*
10 +Kr. 1 196,246Kr. 11 962,46

*price indicative

RS Stock No.:
244-5379
Mfr. Part No.:
FP100R12KT4BOSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

515W

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Height

17mm

Series

FP100R12KT4

Length

122mm

Width

62 mm

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA

Temperature under switching conditions 150° C

Gate-emitter leakage current 100 nA

Reverse transfer capacitance 0.27 nF

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