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Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

RS Stock No.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Brand:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Subtotal (1 tray of 10 units)*

Kr.19 120 72

(exc. VAT)

Kr.23 900 90

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 01. januar 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 +	Kr. 1 912,072	Kr. 19 120,72

*price indicative

RS Stock No.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	7
	Maximum Power Dissipation	515 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 7
	Maximum Power Dissipation 515 W

Datasheet - FP100R12KT4BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

FREE delivery for online orders over 500,00 kr

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