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Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

RS Stock No.:: 244-5404
Mfr. Part No.:: FS150R12KT3BOSA1
Brand:: Infineon

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

Bulk discount available

Subtotal (1 unit)*

Kr.2 381 03

(exc. VAT)

Kr.2 976 29

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

7 unit(s) ready to ship

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Units	Per unit
1 - 1	Kr. 2 381,03
2 - 2	Kr. 2 333,30
3 +	Kr. 2 100,04

*price indicative

RS Stock No.:: 244-5404
Mfr. Part No.:: FS150R12KT3BOSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	200 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Maximum Power Dissipation	700 W
	Number of Transistors	6

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 200 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Maximum Power Dissipation 700 W
	Number of Transistors 6

Datasheet - FS150R12KT3BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF

Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

FREE delivery for online orders over 500,00 kr

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