Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V
- RS Stock No.:
- 244-5408
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.1 858 68
(exc. VAT)
Kr.2 323 35
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 10 unit(s) shipping from 16. mars 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | Kr. 1 858,68 |
| 2 - 2 | Kr. 1 821,48 |
| 3 + | Kr. 1 639,35 |
*price indicative
- RS Stock No.:
- 244-5408
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 750 W | |
| Number of Transistors | 6 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 750 W | ||
Number of Transistors 6 | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
Related links
- Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V
- Infineon FF150R12RT4HOSA1 Series IGBT Module Panel Mount
- Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
- Infineon FS150R12KT4BOSA1 3 Phase Bridge IGBT Module 35-Pin EconoPACK 3, Surface Mount
- Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
- Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
- Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B
- Infineon FP25R12W1T7B11BPSA1 IGBT Module, 25 A 1200 V EASY1B