Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V

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Subtotal (1 unit)*

Kr.2 194 62 

(exc. VAT)

Kr.2 743 28 

(inc. VAT)

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Units
Per unit
1 - 1Kr. 2 194,62
2 - 4Kr. 2 150,95
5 +Kr. 1 935,65

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

7

Maximum Power Dissipation

385 W

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing

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