Infineon IGBT Module, 200 A 600 V EconoPACK
- RS Stock No.:
- 244-5863
- Mfr. Part No.:
- FS200R06KE3BOSA1
- Brand:
- Infineon
Subtotal (1 tray of 10 units)*
Kr. 10 764,12
(exc. VAT)
Kr. 13 455,15
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 03 June 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | Kr. 1 076,412 | Kr. 10 764,12 |
*price indicative
- RS Stock No.:
- 244-5863
- Mfr. Part No.:
- FS200R06KE3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 600W | |
| Package Type | EconoPACK | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | FS200R06KE3 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 600W | ||
Package Type EconoPACK | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series FS200R06KE3 | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 600 V and toatal power dissipation is 600 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 1.90 V
Gate-emitter leakage current 400 nA
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