onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins
- RS Stock No.:
- 245-6963
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Brand:
- onsemi
Subtotal (1 tray of 24 units)*
Kr.14 907 912
(exc. VAT)
Kr.18 634 896
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 24 unit(s), ready to ship
Units | Per unit | Per Tray* |
|---|---|---|
| 24 + | Kr. 621,163 | Kr. 14 907,91 |
*price indicative
- RS Stock No.:
- 245-6963
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 61 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 186 W | |
| Package Type | Case 180AJ (Pb-Free and Halide-Free) Solder Pins | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 61 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 186 W | ||
Package Type Case 180AJ (Pb-Free and Halide-Free) Solder Pins | ||
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM
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