onsemi IGBT Module 1200 V Case 180AJ, Surface
- RS Stock No.:
- 245-6963
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Brand:
- onsemi
Subtotal (1 tray of 24 units)*
Kr. 14 907,912
(exc. VAT)
Kr. 18 634,896
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tray* |
|---|---|---|
| 24 + | Kr. 621,163 | Kr. 14 907,91 |
*price indicative
- RS Stock No.:
- 245-6963
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 186W | |
| Package Type | Case 180AJ | |
| Mount Type | Surface | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | NXH100B120H3Q0SG | |
| Standards/Approvals | RoHS | |
| Width | 32.8 mm | |
| Length | 55.2mm | |
| Height | 13.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 186W | ||
Package Type Case 180AJ | ||
Mount Type Surface | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series NXH100B120H3Q0SG | ||
Standards/Approvals RoHS | ||
Width 32.8 mm | ||
Length 55.2mm | ||
Height 13.9mm | ||
Automotive Standard No | ||
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM
Related links
- onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins
- onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins
- onsemi NXH450B100H4Q2F2SG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins)
- onsemi NXH300B100H4Q2F2SG IGBT Module Q2BOOST -
- onsemi NXH450B100H4Q2F2PG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins)
- onsemi NXH80T120L3Q0S3G IGBT Module, 75 A 1200 V Q0PACK - Case 180AB (Pb-Free and Halide-Free)