onsemi IGBT Module 1000 V Q2BOOST-PIM53, Surface

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
245-6970
Mfr. Part No.:
NXH300B100H4Q2F2SG
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Maximum Power Dissipation Pd

79W

Number of Transistors

6

Package Type

Q2BOOST-PIM53

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Height

17.6mm

Length

93.1mm

Width

47.3 mm

Standards/Approvals

RoHS

Series

NXH300B100H4Q2F2SG

Automotive Standard

No

The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.

Extremely Efficient Trench with Field Stop Technology

Low Switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

3 channel in Q2BOOST package

These are Pb free devices

Related links