Infineon DF200R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole

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Subtotal (1 unit)*

Kr. 542,14

(exc. VAT)

Kr. 677,68

(inc. VAT)

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Per unit
1 - 1Kr. 542,14
2 - 4Kr. 515,03
5 - 9Kr. 493,41
10 - 19Kr. 471,67
20 +Kr. 450,05

*price indicative

Packaging Options:
RS Stock No.:
248-1196
Mfr. Part No.:
DF200R07W2H3B77BPSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

20mW

Number of Transistors

4

Mount Type

Through Hole

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

150°C

Width

48 mm

Length

56.7mm

Series

DF200R07W2H3B77

Height

12mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.

Best cost-performance ratio with reduced system costs

High degree of freedom in design

Highest efficiency and power density

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