Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
- RS Stock No.:
- 248-6698P
- Mfr. Part No.:
- SKM150GB12F4G
- Brand:
- Semikron
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 248-6698P
- Mfr. Part No.:
- SKM150GB12F4G
- Brand:
- Semikron
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±15.0V | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Select all | ||
|---|---|---|
Brand Semikron | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±15.0V | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
The Semikron SEMITRANS series IGBT module has 1200 v collector to emitter voltage. It is mainly used in UPS, electronic welders, inductive heating, switched mode power supplies.
Increased power cycling capability
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
For higher switching frequencies above 15kHz
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
For higher switching frequencies above 15kHz
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