Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

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Subtotal (1 unit)*

Kr.66 58 

(exc. VAT)

Kr.83 22 

(inc. VAT)

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1 - 9Kr. 66,58
10 - 24Kr. 63,26
25 - 49Kr. 60,52
50 - 99Kr. 58,00
100 +Kr. 54,00

*price indicative

Packaging Options:
RS Stock No.:
249-6939
Mfr. Part No.:
IKW40N65RH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Number of Transistors

2

Maximum Power Dissipation

250 W

Configuration

Single

Package Type

PG-TO247-3

The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.

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