Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

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Subtotal (1 unit)*

Kr.98 61 

(exc. VAT)

Kr.123 26 

(inc. VAT)

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1 - 9Kr. 98,61
10 - 24Kr. 93,58
25 - 49Kr. 91,75
50 - 99Kr. 85,69
100 +Kr. 79,74

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Packaging Options:
RS Stock No.:
249-6944
Mfr. Part No.:
IKW50N65SS5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Number of Transistors

2

Maximum Power Dissipation

274 W

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation Cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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