Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.1 746 21 

(exc. VAT)

Kr.2 182 77 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 58,207Kr. 1 746,21
60 - 60Kr. 55,297Kr. 1 658,91
90 +Kr. 51,804Kr. 1 554,12

*price indicative

RS Stock No.:
249-6943
Mfr. Part No.:
IKW50N65SS5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

274 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation Cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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