Infineon IGBT Module, 50 A 650 V, 3-Pin PG-TO-247

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Subtotal (1 tube of 30 units)*

Kr. 852,51

(exc. VAT)

Kr. 1 065,63

(inc. VAT)

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  • 30 unit(s) shipping from 09 March 2026
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Units
Per unit
Per Tube*
30 - 30Kr. 28,417Kr. 852,51
60 - 120Kr. 26,995Kr. 809,85
150 +Kr. 25,858Kr. 775,74

*price indicative

RS Stock No.:
259-1532
Mfr. Part No.:
IKW50N65F5FKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

305W

Package Type

PG-TO-247

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 ±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC, RoHS

Series

High Speed Fifth Generation

Length

41.42mm

Width

16.13 mm

Automotive Standard

No

The Infineon high speed hard-switching IGBT is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.

650 V breakthrough voltage

Compared to best-in-class HighSpeed 3 family

Factor 2.5 lower Qg

Factor 2 reduction in switching losses

200mV reduction in VCEsat

Co-packed with Rapid Si-diode technology

Low COES/EOSS

Mild positive temperature coefficient VCEsa

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