Infineon IGBT, 50 A 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 244-2918
- Mfr. Part No.:
- IKW50N65WR5XKSA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 244-2918
- Mfr. Part No.:
- IKW50N65WR5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 282W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Reverse Conducting | |
| Length | 41.42mm | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 282W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Reverse Conducting | ||
Length 41.42mm | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon Monolithic diode optimized for PFC and welding applications. It has stable temperature behavior and very low VCEsat and low Eoff also Easy parallel switching capability based on positive temperature coefficient of VCEsat.
Low EMI
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
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