Infineon IKW50N65F5FKSA1 IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 259-1533
- Mfr. Part No.:
- IKW50N65F5FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr. 101,02
(exc. VAT)
Kr. 126,28
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 36 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 50,51 | Kr. 101,02 |
| 10 - 18 | Kr. 44,50 | Kr. 89,00 |
| 20 - 48 | Kr. 41,985 | Kr. 83,97 |
| 50 - 98 | Kr. 38,895 | Kr. 77,79 |
| 100 + | Kr. 35,92 | Kr. 71,84 |
*price indicative
- RS Stock No.:
- 259-1533
- Mfr. Part No.:
- IKW50N65F5FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 305W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC, RoHS | |
| Length | 41.42mm | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 305W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC, RoHS | ||
Length 41.42mm | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon high speed hard-switching IGBT is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.
650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
Related links
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- Infineon IKW75N65RH5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3
- Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- Infineon IKW75N65SS5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3
- Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3