Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

View all IGBTs

Subtotal (1 tube of 600 units)*

Kr.14 234 40 

(exc. VAT)

Kr.17 793 00 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
600 +Kr. 23,724Kr. 14 234,40

*price indicative

RS Stock No.:
253-3501
Mfr. Part No.:
BIDNW30N60H3
Brand:
Bourns
Find similar products by selecting one or more attributes.
Select all

Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

230 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247N

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant

Related links