Bourns BIDW50N65T IGBT, 100 A 650 V TO-247

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Subtotal (1 pack of 2 units)*

Kr. 92,29

(exc. VAT)

Kr. 115,362

(inc. VAT)

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  • 1 102 unit(s) ready to ship
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Units
Per unit
Per Pack*
2 - 8Kr. 46,145Kr. 92,29
10 - 48Kr. 41,44Kr. 82,88
50 - 98Kr. 39,13Kr. 78,26
100 - 248Kr. 34,055Kr. 68,11
250 +Kr. 33,365Kr. 66,73

*price indicative

Packaging Options:
RS Stock No.:
253-3509
Mfr. Part No.:
BIDW50N65T
Brand:
Bourns
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Brand

Bourns

Product Type

IGBT

Maximum Continuous Collector Current Ic

100A

Maximum Collector Emitter Voltage Vceo

650V

Package Type

TO-247

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±20 V (Gate-Emitter Voltage VGE )

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

RoHS compliant

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