Infineon FS75R12W2T7B11BOMA1 Full Bridge IGBT, 75 A 1200 V AG-EASY2B-711, Chassis
- RS Stock No.:
- 258-0906
- Mfr. Part No.:
- FS75R12W2T7B11BOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr. 510,57
(exc. VAT)
Kr. 638,21
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 24 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | Kr. 510,57 |
| 2 - 4 | Kr. 485,06 |
| 5 - 9 | Kr. 464,58 |
| 10 - 19 | Kr. 444,10 |
| 20 + | Kr. 423,74 |
*price indicative
- RS Stock No.:
- 258-0906
- Mfr. Part No.:
- FS75R12W2T7B11BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | AG-EASY2B-711 | |
| Configuration | Full Bridge | |
| Mount Type | Chassis | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type AG-EASY2B-711 | ||
Configuration Full Bridge | ||
Mount Type Chassis | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon EasyPACK 2B 1200 V, 75 A six-pack IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and PressFIT contact technology.
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
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