Infineon IGP06N60TXKSA1, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-220, Surface
- RS Stock No.:
- 273-2958
- Mfr. Part No.:
- IGP06N60TXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
Kr. 356,25
(exc. VAT)
Kr. 445,30
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | Kr. 7,125 | Kr. 356,25 |
*price indicative
- RS Stock No.:
- 273-2958
- Mfr. Part No.:
- IGP06N60TXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 12A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.36 mm | |
| Height | 4.57mm | |
| Length | 15.95mm | |
| Series | TrenchStop | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 12A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 10.36 mm | ||
Height 4.57mm | ||
Length 15.95mm | ||
Series TrenchStop | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode fu
High ruggedness and temperature stable behaviour
High device reliability
Very tight parameter distribution