Infineon IHW20N65R5XKSA1 IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- RS Stock No.:
- 273-7440
- Mfr. Part No.:
- IHW20N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.538 26
(exc. VAT)
Kr.672 84
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 120 unit(s) shipping from 16. februar 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | Kr. 17,942 | Kr. 538,26 |
| 120 + | Kr. 16,451 | Kr. 493,53 |
*price indicative
- RS Stock No.:
- 273-7440
- Mfr. Part No.:
- IHW20N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JESD-022, RoHS | |
| Length | 21.1mm | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JESD-022, RoHS | ||
Length 21.1mm | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
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