Semikron Danfoss SKM100GB125DN Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

Kr.2 496 86 

(exc. VAT)

Kr.3 121 08 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 200 unit(s) ready to ship
  • Plus 6 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1Kr. 2 496,86
2 - 4Kr. 2 371,86
5 - 9Kr. 2 254,71
10 - 19Kr. 2 139,85
20 +Kr. 2 032,43

*price indicative

RS Stock No.:
468-2410
Mfr. Part No.:
SKM100GB125DN
Brand:
Semikron Danfoss
Find similar products by selecting one or more attributes.
Select all

Brand

Semikron Danfoss

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94.5 x 34.5 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links