STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr.88 43 

(exc. VAT)

Kr.110 538 

(inc. VAT)

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  • Plus 38 unit(s) shipping from 29. desember 2025
  • Plus 222 unit(s) shipping from 05. januar 2026
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2 - 8Kr. 44,215Kr. 88,43
10 - 24Kr. 37,81Kr. 75,62
26 - 98Kr. 35,635Kr. 71,27
100 - 498Kr. 30,545Kr. 61,09
500 +Kr. 27,17Kr. 54,34

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Packaging Options:
RS Stock No.:
795-9136
Mfr. Part No.:
STGW30NC120HD
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

220 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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