Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 796-5061P
Mfr. Part No.:: GT50JR21
Brand:: Toshiba

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Available to back order for despatch 23.12.2024

Price Each (Supplied in a Tube)

Kr. 55,88

(exc. VAT)

Kr. 69,85

(inc. VAT)

Units	Per unit
1 +	Kr. 55,88

RS Stock No.:: 796-5061P
Mfr. Part No.:: GT50JR21
Brand:: Toshiba

GT50JR21, Silicon N-Channel IGBT Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Maximum Continuous Collector Current	50 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	230 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	15.5 x 4.5 x 20mm
Maximum Operating Temperature	+175 °C

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

IGBT Discretes, Toshiba