onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 5 units)*

Kr. 128,40

(exc. VAT)

Kr. 160,50

(inc. VAT)

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Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units
Per unit
Per Pack*
5 - 45Kr. 25,68Kr. 128,40
50 - 95Kr. 22,136Kr. 110,68
100 - 495Kr. 19,208Kr. 96,04
500 - 995Kr. 16,872Kr. 84,36
1000 +Kr. 15,356Kr. 76,78

*price indicative

Packaging Options:
RS Stock No.:
807-8758
Mfr. Part No.:
ISL9V3040D3ST
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

21A

Product Type

Ignition IGBT

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Gate Emitter Voltage VGEO

±10 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

EcoSPARK

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Energy Rating

300mJ

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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