onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.128 40 

(exc. VAT)

Kr.160 50 

(inc. VAT)

Add to Basket
Select or type quantity
Supply shortage
  • Plus 15 left, shipping from 26. januar 2026
  • Plus 1 735 left, shipping from 02. februar 2026
Our current stock is limited and our suppliers are expecting shortages.
Units
Per unit
Per Pack*
5 - 45Kr. 25,68Kr. 128,40
50 - 95Kr. 22,136Kr. 110,68
100 - 495Kr. 19,208Kr. 96,04
500 - 995Kr. 16,872Kr. 84,36
1000 +Kr. 15,356Kr. 76,78

*price indicative

Packaging Options:
RS Stock No.:
807-8758
Mfr. Part No.:
ISL9V3040D3ST
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

21 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links