- RS Stock No.:
- 826-9055
- Mfr. Part No.:
- IGB10N60TATMA1
- Brand:
- Infineon
120 In stock for same day dispatch
Added
Price Each (In a Pack of 20)
Kr. 13,016
(exc. VAT)
Kr. 16,27
(inc. VAT)
Units | Per unit | Per Pack* |
20 - 180 | Kr. 13,016 | Kr. 260,32 |
200 - 480 | Kr. 9,399 | Kr. 187,98 |
500 - 980 | Kr. 8,283 | Kr. 165,66 |
1000 - 1980 | Kr. 7,783 | Kr. 155,66 |
2000 + | Kr. 7,588 | Kr. 151,76 |
*price indicative |
- RS Stock No.:
- 826-9055
- Mfr. Part No.:
- IGB10N60TATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Exempted
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 110 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.31 x 9.45 x 4.57mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |