STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 200 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 24.45mm
Dimensions 15.75 x 5.15 x 24.45mm
Gate Capacitance 2170pF
Energy Rating 1435µJ
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
40 In stock for delivery within 1 working days
Price Each (In a Pack of 5)
kr 53,858
(exc. VAT)
kr 67,322
(inc. VAT)
Units
Per unit
Per Pack*
5 - 20
kr 53,858
kr 269,29
25 - 95
kr 45,742
kr 228,71
100 - 245
kr 39,68
kr 198,40
250 - 495
kr 37,706
kr 188,53
500 +
kr 33,778
kr 168,89
*price indicative
Packaging Options:
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