Infineon IKW40N120T2FKSA1, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 906-4488
- Mfr. Part No.:
- IKW40N120T2FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.151 24
(exc. VAT)
Kr.189 04
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 unit(s) shipping from 16. februar 2026
- Plus 2 unit(s) shipping from 16. februar 2026
- Plus 46 unit(s) shipping from 23. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 75,62 | Kr. 151,24 |
| 10 - 18 | Kr. 71,10 | Kr. 142,20 |
| 20 - 48 | Kr. 68,925 | Kr. 137,85 |
| 50 - 98 | Kr. 65,835 | Kr. 131,67 |
| 100 + | Kr. 61,32 | Kr. 122,64 |
*price indicative
- RS Stock No.:
- 906-4488
- Mfr. Part No.:
- IKW40N120T2FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 480W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS, JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Energy Rating | 8.3mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 480W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS, JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
Energy Rating 8.3mJ | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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