onsemi, Single Type N-Channel JFET-Channel JFET 5 mA, 3-Pin TO-92
- RS Stock No.:
- 124-1385
- Mfr. Part No.:
- J112
- Brand:
- onsemi
Bulk discount available
Subtotal (1 bag of 1000 units)*
Kr.1 683 00
(exc. VAT)
Kr.2 104 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 8 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 1000 - 2000 | Kr. 1,683 | Kr. 1 683,00 |
| 3000 + | Kr. 1,42 | Kr. 1 420,00 |
*price indicative
- RS Stock No.:
- 124-1385
- Mfr. Part No.:
- J112
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Sub Type | JFET | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Configuration | Single | |
| Mount Type | Through Hole | |
| Package Type | TO-92 | |
| Maximum Power Dissipation Pd | 350mW | |
| Pin Count | 3 | |
| Drain Source Current Ids | 5 mA | |
| Maximum Gate Source Voltage Vgs | -35 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Drain Source Resistance Rds | 50Ω | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Width | 4.19 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Sub Type JFET | ||
Channel Type Type N | ||
Product Type JFET | ||
Configuration Single | ||
Mount Type Through Hole | ||
Package Type TO-92 | ||
Maximum Power Dissipation Pd 350mW | ||
Pin Count 3 | ||
Drain Source Current Ids 5 mA | ||
Maximum Gate Source Voltage Vgs -35 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Drain Source Resistance Rds 50Ω | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Height 5.33mm | ||
Width 4.19 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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