JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 166-2021
Mfr. Part No.J109
kr 1,367
Each (In a Bag of 1000)
Units
N min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 806-1750
Mfr. Part No.J109
kr 2,955
Each (In a Pack of 25)
Units
N min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 760-6034
Mfr. Part No.MMBF5459
kr 2,66
Each (In a Pack of 50)
Units
N 4 → 16mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm
RS Stock No. 806-1753
Mfr. Part No.J111
kr 2,471
Each (In a Pack of 50)
Units
N min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 124-1385
Mfr. Part No.J112
kr 0,967
Each (In a Bag of 1000)
Units
N min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-2910
Mfr. Part No.J111
kr 0,678
Each (In a Bag of 10000)
Units
N min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 146-2080
Mfr. Part No.MMBF5459
kr 0,674
Each (On a Reel of 3000)
Units
N 4 → 16mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm
RS Stock No. 806-1757
Mfr. Part No.J112
kr 2,688
Each (In a Pack of 50)
Units
N min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 163-2025
Mfr. Part No.2SK932-24-TB-E
kr 1,29
Each (On a Reel of 3000)
Units
N 14.5 → 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-3080
Mfr. Part No.MMBF4092
kr 1,35
Each (On a Reel of 3000)
Units
N min. 15mA 0.2 V -40 V 40V Single Single 50 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
kr 1,182
Each (On a Reel of 3000)
Units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
kr 1,088
Each (On a Reel of 3000)
Units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 791-9403
Mfr. Part No.CPH6904-TL-E
kr 4,995
Each (In a Pack of 10)
Units
N 20 → 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 166-3082
Mfr. Part No.MMBF4119
kr 0,86
Each (On a Reel of 3000)
Units
N 0.2 → 0.6mA 10 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-2319
Mfr. Part No.BSR58
kr 0,678
Each (On a Reel of 3000)
Units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 166-0537
Mfr. Part No.BF556A,215
BrandNXP
kr 2,653
Each (On a Reel of 3000)
Units
N 3 → 7mA 30 V -30 V -30V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 773-7813
Mfr. Part No.MMBFJ310LT3G
kr 3,031
Each (In a Pack of 10)
Units
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 807-5201
Mfr. Part No.BSR58
kr 1,163
Each (In a Pack of 100)
Units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 626-3308
Mfr. Part No.PMBFJ308,215
BrandNXP
kr 0,947
Each (In a Pack of 10)
Units
N 12 → 60mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-0548
Mfr. Part No.PMBFJ308,215
BrandNXP
kr 0,823
Each (On a Reel of 3000)
Units
N 12 → 60mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
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