STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP STP12NM50FP
- RS Stock No.:
- 151-409
- Mfr. Part No.:
- STP12NM50FP
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.1 059 80
(exc. VAT)
Kr.1 324 75
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 900 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 450 | Kr. 21,196 | Kr. 1 059,80 |
| 500 + | Kr. 20,138 | Kr. 1 006,90 |
*price indicative
- RS Stock No.:
- 151-409
- Mfr. Part No.:
- STP12NM50FP
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220FP | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 30.6mm | |
| Length | 15.85mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220FP | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 30.6mm | ||
Length 15.85mm | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET, This device developed using MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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