STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4

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Kr.83 98 

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Kr.104 98 

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20 - 180Kr. 4,199Kr. 83,98
200 - 480Kr. 3,987Kr. 79,74
500 - 980Kr. 3,707Kr. 74,14
1000 - 1980Kr. 3,404Kr. 68,08
2000 +Kr. 3,284Kr. 65,68

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Packaging Options:
RS Stock No.:
151-418
Mfr. Part No.:
STD3NK60ZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.4mm

Length

10.1mm

Width

6.6 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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