STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

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Kr.94 04 

(exc. VAT)

Kr.117 56 

(inc. VAT)

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20 - 180Kr. 4,702Kr. 94,04
200 - 480Kr. 4,462Kr. 89,24
500 - 980Kr. 4,142Kr. 82,84
1000 - 1980Kr. 3,81Kr. 76,20
2000 +Kr. 3,667Kr. 73,34

*price indicative

Packaging Options:
RS Stock No.:
151-440
Mfr. Part No.:
STD4NK60ZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

18.8nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Height

2.39mm

Length

10.34mm

Standards/Approvals

RoHS

Width

6.73 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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