STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

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Subtotal (1 tape of 20 units)*

Kr. 293,78

(exc. VAT)

Kr. 367,22

(inc. VAT)

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Units
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Per Tape*
20 - 180Kr. 14,689Kr. 293,78
200 - 480Kr. 13,94Kr. 278,80
500 - 980Kr. 12,933Kr. 258,66
1000 - 1980Kr. 11,904Kr. 238,08
2000 +Kr. 11,452Kr. 229,04

*price indicative

Packaging Options:
RS Stock No.:
151-440
Mfr. Part No.:
STD4NK60ZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

18.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.39mm

Standards/Approvals

RoHS

Length

10.34mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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