STMicroelectronics SuperMESH N-Channel SuperMESH Power MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-263 STB4NK60ZT4
- RS Stock No.:
- 687-5190
- Mfr. Part No.:
- STB4NK60ZT4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 134,53
(exc. VAT)
Kr. 168,16
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 26,906 | Kr. 134,53 |
| 50 - 245 | Kr. 15,794 | Kr. 78,97 |
| 250 - 495 | Kr. 11,14 | Kr. 55,70 |
| 500 + | Kr. 8,69 | Kr. 43,45 |
*price indicative
- RS Stock No.:
- 687-5190
- Mfr. Part No.:
- STB4NK60ZT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | SuperMESH Power MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Standards/Approvals | JEDEC JESD97 | |
| Width | 9.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type SuperMESH Power MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 10.4mm | ||
Standards/Approvals JEDEC JESD97 | ||
Width 9.35mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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