STMicroelectronics SuperMESH Type N-Channel MOSFET, 4.4 A, 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4
- RS Stock No.:
- 151-461
- Mfr. Part No.:
- STD5NK50ZT4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tape of 20 units)*
Kr. 304,76
(exc. VAT)
Kr. 380,96
(inc. VAT)
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Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | Kr. 15,238 | Kr. 304,76 |
| 200 - 480 | Kr. 14,472 | Kr. 289,44 |
| 500 - 980 | Kr. 13,396 | Kr. 267,92 |
| 1000 - 1980 | Kr. 12,35 | Kr. 247,00 |
| 2000 + | Kr. 11,881 | Kr. 237,62 |
*price indicative
- RS Stock No.:
- 151-461
- Mfr. Part No.:
- STD5NK50ZT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | SuperMESH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series SuperMESH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
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