STMicroelectronics SuperMESH Type N-Channel MOSFET, 4.4 A, 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4

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Kr.149 06 

(exc. VAT)

Kr.186 32 

(inc. VAT)

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20 - 180Kr. 7,453Kr. 149,06
200 - 480Kr. 7,076Kr. 141,52
500 - 980Kr. 6,555Kr. 131,10
1000 - 1980Kr. 6,041Kr. 120,82
2000 +Kr. 5,812Kr. 116,24

*price indicative

Packaging Options:
RS Stock No.:
151-461
Mfr. Part No.:
STD5NK50ZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

500V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

6.6 mm

Length

10.1mm

Height

2.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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