STMicroelectronics MDmesh II N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

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Subtotal (1 tape of 10 units)*

Kr. 172,97

(exc. VAT)

Kr. 216,21

(inc. VAT)

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Units
Per unit
Per Tape*
10 - 90Kr. 17,297Kr. 172,97
100 - 490Kr. 12,63Kr. 126,30
500 - 990Kr. 10,914Kr. 109,14
1000 - 2990Kr. 10,422Kr. 104,22
3000 +Kr. 10,067Kr. 100,67

*price indicative

Packaging Options:
RS Stock No.:
151-423
Mfr. Part No.:
STL3NM60N
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT (3.3 x 3.3) HV

Series

MDmesh II

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

22W

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Gate Source Voltage Vgs

25V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

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