STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 10 units)*

Kr.117 95 

(exc. VAT)

Kr.147 44 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 5 940 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
10 - 90Kr. 11,795Kr. 117,95
100 - 240Kr. 11,211Kr. 112,11
250 - 490Kr. 10,376Kr. 103,76
500 - 990Kr. 9,53Kr. 95,30
1000 +Kr. 9,209Kr. 92,09

*price indicative

Packaging Options:
RS Stock No.:
151-423
Mfr. Part No.:
STL3NM60N
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Series

MDmesh II

Package Type

PowerFLAT (3.3 x 3.3) HV

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

22W

Typical Gate Charge Qg @ Vgs

9.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Related links