STMicroelectronics STL Type N-Channel MOSFET, 373 A, 40 V, 8-Pin PowerFLAT (3.3 x 3.3) STL130N4LF8
- RS Stock No.:
- 330-473
- Mfr. Part No.:
- STL130N4LF8
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.12 47
(exc. VAT)
Kr.15 59
(inc. VAT)
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In Stock
- Plus 3 000 unit(s) shipping from 29. desember 2025
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 12,47 |
| 10 - 99 | Kr. 11,21 |
| 100 - 499 | Kr. 10,41 |
| 500 - 999 | Kr. 9,61 |
| 1000 + | Kr. 8,69 |
*price indicative
- RS Stock No.:
- 330-473
- Mfr. Part No.:
- STL130N4LF8
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 373A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT (3.3 x 3.3) | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 373A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT (3.3 x 3.3) | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempted
- COO (Country of Origin):
- CN
The STMicroelectronics 40 V and 100 V power MOSFETs with higher power density, enabling the use of smaller packages for a compact system design without compromising electrical performance. They offer improved noise immunity through enhanced filtering of output voltage overshoots.
Optimized gate charge for faster commutation speeds
Higher immunity to spurious turn-on
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