STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal 100 units (supplied on a continuous strip)*

Kr. 1 263,00

(exc. VAT)

Kr. 1 579,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4 720 unit(s) shipping from 28 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
100 - 490Kr. 12,63
500 - 990Kr. 10,914
1000 - 2990Kr. 10,422
3000 +Kr. 10,067

*price indicative

Packaging Options:
RS Stock No.:
151-423P
Mfr. Part No.:
STL3NM60N
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Series

MDmesh II

Package Type

PowerFLAT (3.3 x 3.3) HV

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.5nC

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

22W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy