STMicroelectronics MDmesh M9 Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247 STWA65N045M9

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Subtotal (1 tube of 30 units)*

Kr.3 796 02 

(exc. VAT)

Kr.4 745 04 

(inc. VAT)

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  • 30 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 +Kr. 126,534Kr. 3 796,02

*price indicative

RS Stock No.:
151-781
Mfr. Part No.:
STWA65N045M9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Series

MDmesh M9

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

312W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8nC

Maximum Operating Temperature

150°C

Width

15.90 mm

Standards/Approvals

No

Length

20.10mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET, I t is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

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