STMicroelectronics STW65N Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4

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Subtotal (1 tube of 30 units)*

Kr.2 452 95 

(exc. VAT)

Kr.3 066 18 

(inc. VAT)

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  • 300 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 30Kr. 81,765Kr. 2 452,95
60 - 60Kr. 79,668Kr. 2 390,04
90 +Kr. 77,678Kr. 2 330,34

*price indicative

RS Stock No.:
287-7053
Mfr. Part No.:
STW65N045M9-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247-4

Series

STW65N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8nC

Maximum Power Dissipation Pd

312W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Higher dv/dt capability

Excellent switching performance

Easy to drive

100 percent avalanche tested

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