STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET, 54 A, 600 V Enhancement, 7-Pin HU3PAK

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Kr.101 42 

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Kr.126 78 

(inc. VAT)

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10 - 49Kr. 82,15
50 - 99Kr. 62,89
100 +Kr. 55,79

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RS Stock No.:
481-132
Mfr. Part No.:
STHU60N046DM9AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

600V

Package Type

HU3PAK

Series

STHU60

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

N-Channel

Width

14.1 mm

Height

3.6mm

Standards/Approvals

AEC-Q101

Length

11.9mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics N-Channel Power MOSFET is based on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features very low RDS(on) per area and an integrated fast-recovery diode. The DM9 technology uses a multi-drain manufacturing process to enhance device structure and performance. With low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this fast-switching MOSFET is Ideal for high-efficiency bridge topologies and ZVS phase-shift converters.

Low gate charge and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Excellent switching performance thanks to the extra driving source pin

AEC-Q101 qualified

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