IXYS X2-Class Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin ISOPLUS247

Subtotal (1 tube of 30 units)*

Kr.3 972 15 

(exc. VAT)

Kr.4 965 18 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 132,405Kr. 3 972,15

*price indicative

RS Stock No.:
168-4814
Mfr. Part No.:
IXTR102N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Package Type

ISOPLUS247

Series

X2-Class

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

152nC

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

16.13mm

Standards/Approvals

No

Height

5.21mm

Width

21.34 mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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