STMicroelectronics STripFET F6 Type P-Channel MOSFET, 35 A, 60 V Enhancement, 3-Pin TO-252 STD35P6LLF6

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Kr.102 27 

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Kr.127 84 

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5 - 45Kr. 20,454Kr. 102,27
50 - 95Kr. 19,47Kr. 97,35
100 - 495Kr. 18,076Kr. 90,38
500 - 995Kr. 16,588Kr. 82,94
1000 +Kr. 15,948Kr. 79,74

*price indicative

Packaging Options:
RS Stock No.:
151-912
Mfr. Part No.:
STD35P6LLF6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

STripFET F6

Pin Count

3

Maximum Drain Source Resistance Rds

0.028Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

70W

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics P-channel Power MOSFET, developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

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