STMicroelectronics STripFET II N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- RS Stock No.:
- 151-936
- Mfr. Part No.:
- STD12NF06T4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
Kr. 10 652,50
(exc. VAT)
Kr. 13 315,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 09 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | Kr. 4,261 | Kr. 10 652,50 |
| 5000 + | Kr. 4,159 | Kr. 10 397,50 |
*price indicative
- RS Stock No.:
- 151-936
- Mfr. Part No.:
- STD12NF06T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | STripFET II | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series STripFET II | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
Related links
- STMicroelectronics STripFET II N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- STMicroelectronics STripFET II N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD12NF06LT4
- STMicroelectronics STripFET II N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET II N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET II N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD60NF06T4
- STMicroelectronics STripFET II N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD35NF06LT4
- STMicroelectronics STripFET II N-Channel MOSFET 250 V Enhancement, 3-Pin TO-252 STD17NF25
- STMicroelectronics STripFET II N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4