STMicroelectronics SuperMESH Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220 STP6NK60Z

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Subtotal (1 tube of 50 units)*

Kr.466 30 

(exc. VAT)

Kr.582 90 

(inc. VAT)

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  • 50 unit(s) ready to ship
  • Plus 50 unit(s) shipping from 18. mars 2026
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Units
Per unit
Per Tube*
50 - 450Kr. 9,326Kr. 466,30
500 - 950Kr. 8,859Kr. 442,95
1000 +Kr. 8,207Kr. 410,35

*price indicative

RS Stock No.:
151-941
Mfr. Part No.:
STP6NK60Z
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SuperMESH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

28.9mm

Length

28.9mm

Width

10.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is obtained through an extreme optimization of well established strip based Power MESH layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Extremely high dv/dt capability

100% avalanche tested

Gate charge minimized

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