STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

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Subtotal 50 units (supplied on a continuous strip)*

Kr. 1 728,60

(exc. VAT)

Kr. 2 160,75

(inc. VAT)

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Last RS stock
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Units
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50 - 120Kr. 34,572
125 +Kr. 27,09

*price indicative

Packaging Options:
RS Stock No.:
151-952P
Mfr. Part No.:
STD13NM60N
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

MDmesh II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

27nC

Maximum Operating Temperature

150°C

Height

2.4mm

Standards/Approvals

RoHS

Length

10.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

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