STMicroelectronics STGAP2 N-Channel MOSFET, 4 A, 1.7 kV Enhancement, 8-Pin SO-8 STGAP2SICSNC

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Subtotal (1 pack of 5 units)*

Kr. 221,02

(exc. VAT)

Kr. 276,28

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 44,204Kr. 221,02
50 - 245Kr. 38,896Kr. 194,48
250 - 495Kr. 34,732Kr. 173,66
500 +Kr. 29,836Kr. 149,18

*price indicative

RS Stock No.:
152-180
Mfr. Part No.:
STGAP2SICSNC
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

1.7kV

Package Type

SO-8

Series

STGAP2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1GΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

125°C

Height

1.75mm

Length

5mm

Width

4mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
TW
The STMicroelectronics single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and Interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.

Separate sink and source option for easy gate driving configuration

4 A Miller CLAMP dedicated pin option

UVLO function

Gate driving voltage up to 26 V

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