DiodesZetex Type N-Channel MOSFET, 1.7 A, 20 V Enhancement, 3-Pin SOT-23 ZXM61N02FTA
- RS Stock No.:
- 154-958
- Mfr. Part No.:
- ZXM61N02FTA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.97 55
(exc. VAT)
Kr.121 95
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 175 unit(s) ready to ship
- Plus 45 000 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 125 | Kr. 3,902 | Kr. 97,55 |
| 150 - 725 | Kr. 2,242 | Kr. 56,05 |
| 750 - 1475 | Kr. 2,082 | Kr. 52,05 |
| 1500 + | Kr. 2,027 | Kr. 50,68 |
*price indicative
- RS Stock No.:
- 154-958
- Mfr. Part No.:
- ZXM61N02FTA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.4nC | |
| Maximum Power Dissipation Pd | 806mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Length | 3.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.4nC | ||
Maximum Power Dissipation Pd 806mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Length 3.05mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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