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MOSFETs
N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXYS IXFH170N10P
RS Stock No.:
193-509
Mfr. Part No.:
IXFH170N10P
Brand:
IXYS
View all MOSFETs
17 In stock for same day dispatch
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Price Each
Kr. 127,54
(exc. VAT)
Kr. 159,42
(inc. VAT)
Units
Per unit
1 - 4
Kr. 127,54
5 - 19
Kr. 117,32
20 - 49
Kr. 111,43
50 - 99
Kr. 85,55
100 +
Kr. 81,66
Packaging Options:
Standard Pack
Production Pack
RS Stock No.:
193-509
Mfr. Part No.:
IXFH170N10P
Brand:
IXYS
Technical Reference
Legislation and Compliance
Product Details
Specifications
IXFH 170N10P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
16.26mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
198 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
21.46mm
RS Stock No.:
193-509
Mfr. Part No.:
IXFH170N10P
Brand:
IXYS
Technical Reference
Legislation and Compliance
Product Details
Specifications
IXFH 170N10P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
100 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
16.26mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
198 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
21.46mm